Join us for an exclusive webinar. Our experts will unravel the incredible capabilities and potential applications of this cutting-edge technology.
Uncover the impact of significantly reduced RDS(on) on lowering conduction losses and optimizing efficiency in various operational scenarios. Delve into the narrow gate threshold voltage spread and reduced transconductance that make the OptiMOS™ 6 200 V MOSFET a superior device for paralleling, enhancing system performance. Gain an understanding of how the soft diode behavior, low reverse recovery charge, and improved linearity of output capacitance contribute to the lowest switching losses, while reducing EMI and enhancing system efficiency in applications such as server, telecom, ESS, and solar. Learn about the unmatched combination of wide Safe Operating Area (SOA) and low RDS(on), making the OptiMOS™ 6 200 V ideal for static switching applications like Battery Management Systems (BMS).
This webinar is a must-attend for engineers, designers, and industry professionals seeking to harness the full potential of OptiMOS™ 6 200 V MOSFET technology in their cutting-edge applications. Register now to secure your spot and stay ahead of the curve!
Wilhelm joined Infineon in 2020 after earning his master's degree in electrical engineering and economics from the University of Graz. He is an International Graduate Program (IGP) Alumni and has worked on Medium Voltage GaN-HEMT and Si MOSFETs...
Before joining Infineon in 2022 as a system application engineer, Felix worked as a project assistant at the Electric Drives and Machines Institute at Graz University of Technology. During this time, he focused on the system and software design of...