New, emerging low-voltage (< 1000 VAC and < 1500 VDC) power distribution schemes require fast acting circuit protection devices, typically implemented as solid-state circuit breakers (SSCB). In contrast to conventional electro-mechanical breakers, SSCBs comprise semiconductor power switches enabling the interruption of faulted circuits within sub-microsecond range.

The employed power switch must support low conduction losses during normal operation while being capable of handling extreme overvoltage and overcurrent / short circuit events in a reliable manner. Addressing these specific requirements, an application-tailored Silicon Carbide JFET technology in combination with optimized discrete packaging enables ultra-low RDS(on) (1 mΩ – 5 mΩ at 750 V - 1.2 kV VBDss) power devices.

Starting from key requirements of SSCB applications, the presentation will focus on the specific features of the new JFET technology and demonstrate the performance by practical application measurements.