Webinar: Double Pulse Load Pull for Trapping Characterization of GaN Transistors by Horizon House Publications

Double Pulse Load Pull for Trapping Characterization of GaN Transistors

About

GaN HEMT power amplifiers used in radar, wireless infrastructure, and pulsed RF systems exhibit pronounced dynamic behavior driven by charge trapping effects. Conventional CW or single pulse Load Pull techniques often fail to capture this behavior under realistic operating conditions. RF Double Pulse Load Pull separates RF stress conditioning from performance measurement by using an RF pre pulse to define the large signal operating point (LSOP), thereby establishing a controlled trapping and thermal state prior to RF characterization. This webinar will describe how the Maury Microwave MT2000 platform enables repeatable, trapping aware Load Pull measurements that closely reflect real world pulsed and high peak to average RF operation.

Presenter

Dr. Osman Ceylan

Lead Solutions Specialist

Dr. Osman Ceylan is a Lead Solutions Specialist at Maury Microwave, where he has been bringing his expertise since 2019. In his role, he also supervises the global Customer Success Team in delivering and supporting advanced large-signal characterization and noise parameter measurement solutions. He specializes in advanced semiconductor device characterization using mixed-signal active load-pull systems. A Senior IEEE Member, Dr. Ceylan serves as the Vice-Chair of the IEEE Foothill Section in California, USA, and is an active member of the IEEE MTT-S TC-3 Microwave Measurements Committee. Prior to joining Maury, Dr. Ceylan gained international experience working in Turkey, Japan, and the Netherlands within the high-power RF field, specializing in the design of high-power devices and amplifiers. He holds B.Sc., M.Sc., and Ph.D. degrees in Electronics Engineering from Istanbul Technical University.

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