RF systems need power amplifiers (PAs) to deliver linear efficient high output power. As systems move to higher-order modulation schemes such as 64/128/256 Quadrature Amplitude Modulation (QAM), they also must deliver high linearity and efficiency in denser environment with stringent peak-to-average power ratio (PAPR). A new generation of Gallium Nitride (GaN) on Silicon Carbide (SiC) Monolithic Microwave Integrated Circuits (MMIC) PAs offers a solution to these challenges with highest power density to generate high linear output power with high efficiency.

Some of the biggest growth opportunities for the RF power amplifiers are in satellite communications, as well as emerging 5G communications solutions. NASA has enabled private-sector companies to launch thousands of low-Earth-orbit (LEO) satellites that are now circling the earth and delivering broadband Internet access, navigation, maritime surveillance, remote sensing and other services. These RF applications consistently seek SWaP-C or Size, Weight, Power, and Cost benefits. Large dish antennas are being replaced with phased array antennas for satellite communication that require smaller size components for integration, as well as lower weight components. High RF power, which is linear with high P1dB and IP3, to reduce distortion and is efficient with high PAE to minimize power consumption, is essential for RF applications.

This webinar explores performance advances in GaN MMIC power amplifiers applied to advanced radar technology, linear power Satcom uplinks, 5G and wideband power amplifier applications. It discusses GaN on SiC MMIC power attributes that are critical to improving and offering more compelling next-generation products for 5G, Aerospace & Defense and SatCom applications. For Space applications, RF Solutions from COTS to Rad Hard, plastic to hermetically sealed packages will be discussed.